Laser stimulated high current density photoelectron generator and method of manufacture
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United States of America Patent
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Jul 17, 1984
Issued Date -
N/A
app pub date -
Aug 22, 1983
filing date -
Nov 30, 1981
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Abstract
An electron beam generator particularly adapted for direct-write semiconductor lithography applications is disclosed which includes a photoemissive cathode, a modulable laser for illuminating the photoemissive cathode, and light optics to create an optical pattern on the cathode. The photoemissive cathode is composed of a light transmissive substrate onto which is deposited an optically semitransparent, electrically conductive film. This film in turn is coated with a thin layer of a photoemissive substance such as cesium antimonide so that the photoemissive cathode emits an intense and substantially monochromatic beam of electrons upon laser light illumination. The emitted electron beam is configured in accordance with the optical pattern created on the cathode, and in passing through successive electron optical devices is further shaped and sized for use, for example, in lithographically generating very large scale integrated (VLSI) circuits on semiconductors.
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- 15 United States
- 10 France
- 8 Japan
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Patent Owner(s)
- THERMO ELECTRON CORPORATION
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Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Lee, Chunghsin | Reading, MA | 30 | 1297 |
Oettinger, Peter E | Acton, MA | 8 | 526 |
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Fee | Large entity fee | small entity fee | micro entity fee |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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