Semiconductor integrated circuit device with low power consumption in a standby mode using an on-chip substrate bias generator
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United States of America Patent
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Jul 17, 1984
Grant Date -
N/A
app pub date -
May 6, 1981
filing date -
May 13, 1980
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A mode switching transistor which is controlled by a chip enable signal is connected between a power supply terminal and a MOS inverter including transistors. The transistor functions as a weak depletion or depletion type MOS transistor to provide sufficient current with a first back gate bias given in an active mode and functions as a perfect enhancement type transistor to completely cut off current with a second back gate bias given in a standby mode.
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