Semiconductor strain gauge with integral compensation resistors
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United States of America Patent
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Jul 24, 1984
Grant Date -
N/A
app pub date -
Nov 5, 1982
filing date -
Nov 5, 1982
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A transducer operating on the strain gauge principle having integral temperature compensation and calibration resistors is disclosed. In the presently preferred embodiment, a silicon dioxide layer is disposed on a silicon substrate. Platinum alloy strain gauge resistors are disposed on the silicon dioxide layer and form a Wheatstone bridge circuit configuration. Laser trimable chromium nitride, platinum alloy and gold temperature compensation and calibration resistors are formed on the silicon dioxide layer from the same films used to form the strain gauge, adhesion layers, conductors and bonding pads, to permit the transducer to be calibrated such that its electrical characteristics are in conformance to specified tolerances when the transducer is subjected to temperature variations.
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