High speed and current gain insulated gate field effect transistors
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United States of America Patent
Stats
-
Jul 24, 1984
Grant Date -
N/A
app pub date -
Mar 20, 1981
filing date -
Mar 20, 1981
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An improved insulated gate field effect transistor having a plurality of alternately positioned source and drain regions interconnected by interdigitized drain and source finger conductors making contact at a plurality of positions to a respective source or drain region. A serpentine gate conductor makes contacts to both areas of the plurality of polycrystalline gates between the plurality of source and drain regions.

First Claim
Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | Total Patents |
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HARRIS CORPORATION | MELBOURNE, FL | 2058 |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
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Glenn, R Douglas | Palm Bay, FL | 1 | 30 |
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* 4808861 Integrated circuit to reduce switching noise | 17 | 1986 | |
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Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
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Fee | Large entity fee | small entity fee | micro entity fee |
---|---|---|---|
Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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