High speed and current gain insulated gate field effect transistors

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO

4462041

SERIAL NO

06246077

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An improved insulated gate field effect transistor having a plurality of alternately positioned source and drain regions interconnected by interdigitized drain and source finger conductors making contact at a plurality of positions to a respective source or drain region. A serpentine gate conductor makes contacts to both areas of the plurality of polycrystalline gates between the plurality of source and drain regions.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
HARRIS CORPORATIONMELBOURNE, FL2000

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Glenn, R Douglas Palm Bay, FL 1 29

Cited Art Landscape

Patent Info (Count) # Cites Year
 
BOARD OF REGENTS OF THE NEVADA SYSTEM OF HIGHER EDUCATION, ON BEHALF OF THE UNIVERSITY OF NEVADA, RENO (1)
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Patent Citation Ranking

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