US Patent No: 4,462,041

Number of patents in Portfolio can not be more than 2000

High speed and current gain insulated gate field effect transistors

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Abstract

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An improved insulated gate field effect transistor having a plurality of alternately positioned source and drain regions interconnected by interdigitized drain and source finger conductors making contact at a plurality of positions to a respective source or drain region. A serpentine gate conductor makes contacts to both areas of the plurality of polycrystalline gates between the plurality of source and drain regions.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
HARRIS CORPORATIONMELBOURNE, FL1826

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Glenn, R Douglas Palm Bay, FL 1 27

Cited Art Landscape

Patent Info (Count) # Cites Year
 
BOARD OF REGENTS OF THE NEVADA SYSTEM OF HIGHER EDUCATION, ON BEHALF OF THE UNIVERSITY OF NEVADA, RENO (1)
2005/0199,047 Liquid cell and passivated probe for atomic force microscopy and chemical sensing 17 2004
 
Other [Check patent profile for assignment information] (1)
4,219,828 Multidrain metal-oxide-semiconductor field-effect 11 1978

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
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8,450,743 Semiconductor device having parallel thin film transistors 0 2009
 
INFINEON TECHNOLOGIES AUSTRIA AG (3)
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7,019,337 Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor 5 2003
 
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