US Patent No: 4,462,041

Number of patents in Portfolio can not be more than 2000

High speed and current gain insulated gate field effect transistors

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Abstract

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An improved insulated gate field effect transistor having a plurality of alternately positioned source and drain regions interconnected by interdigitized drain and source finger conductors making contact at a plurality of positions to a respective source or drain region. A serpentine gate conductor makes contacts to both areas of the plurality of polycrystalline gates between the plurality of source and drain regions.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
HARRIS CORPORATIONMELBOURNE, FL1265

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Glenn, R Douglas Palm Bay, FL 1 29

Cited Art Landscape

Patent Info (Count) # Cites Year
 
BOARD OF REGENTS OF THE NEVADA SYSTEM OF HIGHER EDUCATION, ON BEHALF OF THE UNIVERSITY OF NEVADA, RENO (1)
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Patent Citation Ranking

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