
US Patent No: 4,462,041
Number of patents in Portfolio can not be more than 2000
High speed and current gain insulated gate field effect transistors
Stats
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Jul 24, 1984
Issued date -
Mar 20, 1981
filing date -
06/246,077
serial no -
Expired
status
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Abstract
An improved insulated gate field effect transistor having a plurality of alternately positioned source and drain regions interconnected by interdigitized drain and source finger conductors making contact at a plurality of positions to a respective source or drain region. A serpentine gate conductor makes contacts to both areas of the plurality of polycrystalline gates between the plurality of source and drain regions.
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International Classification(s)
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Cited Art
| Patent Info | (Count) | # Cites | Year |
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| 2005/0199,047 Liquid cell and passivated probe for atomic force microscopy and chemical sensing | 2004 | ||
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| 4,219,828 Multidrain metal-oxide-semiconductor field-effect | 11 | 1978 | |