High speed and current gain insulated gate field effect transistors
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United States of America Patent
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Jul 24, 1984
Grant Date -
N/A
app pub date -
Mar 20, 1981
filing date -
Mar 20, 1981
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An improved insulated gate field effect transistor having a plurality of alternately positioned source and drain regions interconnected by interdigitized drain and source finger conductors making contact at a plurality of positions to a respective source or drain region. A serpentine gate conductor makes contacts to both areas of the plurality of polycrystalline gates between the plurality of source and drain regions.
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