Method for dry etching of a substrate surface
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United States of America Patent
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Aug 14, 1984
Grant Date -
N/A
app pub date -
Nov 15, 1983
filing date -
Nov 20, 1982
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention provides a method for fine pattern-wise etching of a surface layer on a substrate such as semiconductor silicon wafers in a dry process by use of a gaseous mixture of pentafluorochloroethane and sulfur hexafluoride as the etching gas to support the plasma atmosphere. The inventive method is advantageous in the compatibility of the requirements for a large etching rate and a high precision of the fine patterning in contrast to the generally accepted understanding that these two requirements are not compatible with each other since an etching gas having a high etching rate causes remarkable side etching to decrease the precision of the desired patterning.
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