Bidirectional switch using two gated diode switches in a single dielectrically isolated tub
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United States of America Patent
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Aug 21, 1984
Grant Date -
N/A
app pub date -
Dec 23, 1981
filing date -
Dec 23, 1981
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor structure contains two interconnected gated diode switches in a common dielectrically isolated semiconductor tub. This structure functions as a bidirectional switch. A gate region physically located between the two switches provides electrical isolation to allow proper operation.
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