Plasma etch process for single-crystal silicon with improved selectivity to silicon dioxide
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United States of America Patent
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Aug 28, 1984
Grant Date -
N/A
app pub date -
Dec 22, 1983
filing date -
Dec 22, 1983
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A plasma etching composition is set forth which comprises chlorine in an amount from about 40% to about 90%, a shape modifier species in an amount from about 10% to about 60%, and an etching selectivity enhancer in an amount sufficient to render the composition at least about 10 times as effective for etching a wafer as for etching a masking layer, the above percents being by mole. The composition is useful for plasma etching of a semiconductor wafer masked with a masking layer having an opening therethrough exposing a portion of the wafer which is to be etched in order to form a depression of a desired depth. This allows depressions of increased depth to be formed in wafers without increasing the thickness of the masking layer.
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