Method for making thin-film transistors

United States of America Patent

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Sep 4, 1984
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Dec 1, 1982
filing date
Dec 10, 1981

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Expired

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Abstract

A method for making a thin-film transistor wherein a gate insulating layer is formed by anodizing two oxide layers on the substrate and then etching the assembly to completely remove the uppermost one of these layers to leave the lowermost layer so as to serve as the gate insulating layer.

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Patent Owner(s)

Patent Owner	Address
SHARP KABUSHIKI KAISHA	1 TAKUMI-CHO SAKAI-KU SAKAI CITY OSAKA 590-8522 590-8522
JAPAN ELECTRONIC INDUSTRY DEVELOPMENT ASSOCIATION	5-8 SHIBAKOEN 3-CHOME MINATO-KU TOKYO-TO

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Inventor Name	Address	# of filed Patents	Total Citations
Kato, Hiroaki	Tenri, JP	216	3745
Kishi, Kohhei	Nara, JP	8	281
Takafuji, Yutaka	Nara, JP	108	4765

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Method for making thin-film transistors

Number of patents in Portfolio can not be more than 2000

United States of America Patent

06446046

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SERIAL NO	06446046
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