Narrow band gap photovoltaic devices with enhanced open circuit voltage
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United States of America Patent
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Sep 11, 1984
Grant Date -
N/A
app pub date -
Apr 15, 1983
filing date -
Apr 15, 1983
priority date (Note) -
Expired
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Abstract
The open circuit voltage and efficiency of photovoltaic devices formed from multiple regions of semiconductor alloys including at least one narrow band gap semiconductor alloy are enhanced. The device includes a pair of doped regions and an intrinsic body between the doped regions. The intrinsic body includes a first intrinsic region and an open circuit voltage enhancement means including a second intrinsic region. The second intrinsic region has a wider band gap than the band gap of the first intrinsic region and is disposed between the first intrinsic region and one of the doped regions. The open circuit enhancement means can also include a third intrinsic region also having a wider band gap than the first intrinsic region and disposed on the side of the first intrinsic region opposite the second intrinsic region.
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