Thin film capacitor with a dual bottom electrode structure

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United States of America Patent

PATENT NO 4471405
SERIAL NO

06538618

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Abstract

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A thin film capacitor having a dual bottom electrode is provided. The bottom electrode includes a first layer of metal and a second layer of platinum, the metal of the first layer having the characteristic of forming a stable intermetallic phase with platinum during heat treatment. The first layer metal may be selected from the group consisting of Hf, Zr and Ta. The thin film capacitor may be employed as a decoupling capacitor in VLSI devices.

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Patent Owner(s)

Patent OwnerAddress
INTERNATIONAL BUSINESS MACHINES CORPORATIONARMONK NY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Howard, James K Fishkill, NY 48 1472
Srikrishnan, Kris V Wappingers Falls, NY 21 1256

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