Thin film capacitor with a dual bottom electrode structure

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United States of America Patent

PATENT NO 4471405
SERIAL NO

06538618

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Abstract

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A thin film capacitor having a dual bottom electrode is provided. The bottom electrode includes a first layer of metal and a second layer of platinum, the metal of the first layer having the characteristic of forming a stable intermetallic phase with platinum during heat treatment. The first layer metal may be selected from the group consisting of Hf, Zr and Ta. The thin film capacitor may be employed as a decoupling capacitor in VLSI devices.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
INTERNATIONAL BUSINESS MACHINES CORPORATIONARMONK, NY46918

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Howard, James K Fishkill, NY 48 1464
Srikrishnan, Kris V Wappingers Falls, NY 21 1219

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Patent Info (Count) # Cites Year
 
Other [Check patent profile for assignment information] (1)
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AVX CORPORATION (1)
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The United States of America as represented by the Secretary of the Navy (1)
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* Cited By Examiner