Method of making semiconductor device
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United States of America Patent
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Sep 18, 1984
Issued Date -
N/A
app pub date -
Jul 8, 1983
filing date -
Oct 9, 1981
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device comprising a semiconductor body having a depression formed into the first surface of the body. The device further comprises member means comprising a thermal-to-electric or static electric element, the member means having a predetermined configuration suspended over the depression. The member means is connected to the first surface at least at one location, the depression opening to the first surface around at least a portion of the predetermined configuration. The depression provides substantial physical and thermal isolation between the element and the semiconductor body. In this manner, an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the element and the semiconductor body.
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