Method for manufacturing an integrated circuit device
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United States of America Patent
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-
Sep 25, 1984
Grant Date -
N/A
app pub date -
Jun 27, 1983
filing date -
Jun 27, 1983
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for manufacturing an integrated circuit thermal print head is illustrated including transistor 20 and a resistor doped region 22 formed on a first surface of a silicon circuit wafer 10. A contamination barrier in the form of a moat 26 filled with silicon nitride 30 is formed around the transistor 20. A support wafer 50 is secured to the first surface of the circuit wafer 10 by an adhesive layer 58. The circuit wafer 10 is thinned, and the exposed surface of the circuit wafer 10 is photoshaped to define wafer segments 68 positioned over the resistor doped region 22.
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