Semiconductor integrated circuit with a response time compensated with respect to temperature
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United States of America Patent
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-
Sep 25, 1984
Grant Date -
N/A
app pub date -
Oct 16, 1981
filing date -
Oct 22, 1980
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A current-controlling MOS transistor is connected between a power source and an MOS circuit. A control voltage which has a level related to temperature is applied to the gate electrode of the control MOS transistor in order to compensate for current reduction at high temperatures due to the lowering of the mobility of minority carriers. The response time of the MOS circuit is made less dependent on temperature as a result of the current compensation.
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