Method for pattern-wise etching of a metallic coating film

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 4474642
SERIAL NO

06514793

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

The invention provides an improved process for providing wirings and electrodes of aluminum film on the surface of a substrate. Instead of the conventional method of directly forming an organic resist layer on the metal film, a remarkable improvement in the fineness and accuracy of patterning is obtained by providing a subsidiary masking layer, mainly composed of silicon dioxide, between the metal film and the organic resist layer; and pattern-wise etching by first etching the subsidiary masking layer through a patterned mask of the organic resist layer with a fluorine-containing etching gas to form a patterned subsidiary masking layer, and then etching the metal film with a chlorine-containing etching gas through the mask of the patterned subsidiary masking layer, followed by final removal of the remaining subsidiary masking layer.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
TOKYO DENSHI KAGAKU CO LTD251 NAKAMARUKO NAKAHARA-KU KAWASAKI-SHI KANAGAWA-KEN

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hashimoto, Akira Yokohama, JP 317 4011
Nakane, Hisashi Kawasaki, JP 33 892
Nakayama, Muneo Tokyo, JP 28 591
Nishimura, Toshihiro Kawasaki, JP 75 1158

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation