New magnetoresistive materials
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United States of America Patent
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Oct 9, 1984
Grant Date -
N/A
app pub date -
Jun 30, 1983
filing date -
Jun 30, 1983
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Devices and circuits are described employing magnetoresistive materials exhibiting a negative .DELTA..rho. effect (.DELTA..rho.=.rho..parallel.-.rho..perp.). In these materials, the electrical resistivity .rho. of the material in a direction perpendicular to the direction of current through the material is greater than the electrical resistivity .rho..parallel. of the material in a direction parallel to the direction of the electrical current through the material. These are ferromagnetic materials exhibiting magnetoresistance in the presence of an electrical current through the material and a magnetic field applied to the material to magnetize it to saturation at room temperature. These devices and circuits have advantages over conventional devices and circuits employing magnetoresistive materials of the conventional type, in which .DELTA..rho. is a positive quantity.
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