Importance

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Abstract

In vapor growth of a doped semiconductor layer on a substrate, a plurality of sampling points are selected in the layer to be grown and in the substrate and each treated as a diffusion source. Computation is carried out to provide the actual doping program for realizing a desired doping profile and to provide the resultant doping profile from the actual doping characteristics. Monitoring means monitors the vapor growth and feeds back information to computing means. The computing means rearrange the doping program and supply command to means for controlling the vapor growth. It is found it is effective to invert the conductivity type of impurity at least two times particularly in the initial stage of the vapor growth for providing a sharp profile of net impurity distribution.

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First Claim