Method and apparatus for gas phase treating substrates
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United States of America Patent
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Dec 4, 1984
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N/A
app pub date -
Mar 16, 1983
filing date -
Mar 16, 1982
priority date (Note) -
Expired
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Abstract
Despite the short lifetime of excited plasma gas, a very large number of wafers can be uniformly gas phase treated in the plasma state by using a single high frequency power supply coil or capacitor, not only for exciting reaction gas passing near the wafers in a reaction tube but also for heating radiators, surrounding the substrates, which heat the wafers.
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