Semiconductor device manufacturing unit
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United States of America Patent
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-
Dec 11, 1984
Grant Date -
N/A
app pub date -
Oct 28, 1980
filing date -
Oct 30, 1979
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor device manufacturing unit in which plasma gas is maintained sealed in a quartz tube by a magnet disposed outside the quartz tube to make the density of plasma gas high and uniform thereby improving the quality of CVD films deposited with the gas and reducing the processing time for semiconductor wafers. A wafer holder is movably mounted in the quartz tube. A support bar is provided for moving the wafer holder with the support bar serving additionally as a ground electrode. An RF electrode and magnet are disposed outside the quartz tube. A heater may be disposed outside the RF electrode and magnet.
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