Method and device for determining the physical characteristics of a semiconductor material
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United States of America Patent
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-
Dec 11, 1984
Grant Date -
N/A
app pub date -
Sep 8, 1983
filing date -
Sep 8, 1982
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a method for determining the physical characteristics of a silicon wafer, one side of the wafer (4) is removably fixed to the base (2) of a container (1) so as to close off a hole (3) therein. An electrical connection to this side of the wafer (4) is made thru the hole (3). The wafer (4) forms the working electrolyte of a cell comprising an electrolyte contained in the container (1). An auxiliary electrode (14) is removably placed in the electrolyte. The method and the device implementing it can be used to determine the crystallographic and electrical characteristics of a sample of silicon.
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