Methods of and apparatus for sputtering material onto a substrate
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United States of America Patent
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-
Jan 1, 1985
Grant Date -
N/A
app pub date -
Mar 9, 1984
filing date -
Mar 9, 1984
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An argon-nitrogen sputtering gas mixture is introduced into a cylindrical sputtering chamber (20) at essentially the geometric center of the chamber. The gas mixture then disperses through open areas in the chamber about upper and lower edges of a cylindrical tantalum target (24) and homogeneously into a sputtering area (30) between the target and a plurality of substrates (12) on a rotatable carrousel (28). As tantalum material then is sputtered from the target onto the substrates (12), tantalum films (16), which are uniformly doped with nitrogen, are formed on the substrates. A target cooling cell assembly (26), comprising a pair of C-shaped cooling cells (92) having independent cooling water input-and-return systems (95), provides improved cooling of the target during the sputtering operation.
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