Thermoelectric materials and devices made therewith
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United States of America Patent
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Jan 1, 1985
Grant Date -
N/A
app pub date -
Jul 21, 1983
filing date -
Jul 21, 1983
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The disclosed invention includes improved devices and materials for thermoelectric conversion, particularly for operation at temperatures of 300.degree. C. and below. Disordered p-type semiconductor elements incorporate compound adjuvants of silver and lead to achieve enhanced 'figure of merit' values and corresponding increased efficiencies of thermoelectric conversion. Similar results are obtained with disordered n-type elements by employing lowered selenium contents, preferably in combination with cuprous bromide. Improved conversion devices include powder pressed elements from one or both of these materials.
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