Programmable read only memory cell having an electrically destructible programmation element integrally formed with a junction diode
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United States of America Patent
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Jan 15, 1985
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N/A
app pub date -
Sep 28, 1982
filing date -
Sep 30, 1977
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Abstract
A programmable read-only memory includes a number of programmable memory cells, each of which is formed in a thin layer of semiconductor material which extends on an insulating layer of a semiconductor body. Each programmable memory cell includes a p-n junction diode and an electrically destructible programmation element which are integrally formed in the thin layer of semiconductor material. The programmation element includes a necked-down portion of the thin layer, and this element may also have a p-n junction. The resulting structure yields a memory cell which is simple, highly compact, and which can be easily and reliably manufactured by known methods.
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