Implanting yttrium and oxygen ions at semiconductor/insulator interface
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United States of America Patent
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Jan 22, 1985
Grant Date -
N/A
app pub date -
Apr 11, 1983
filing date -
Apr 12, 1982
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor device comprising an insulating substrate such as sapphire and a semiconductor element region formed on the substrate, wherein an insulating layer containing yttrium or a lanthanide element is interposed between the substrate and semiconductor element region. A method of manufacturing a semiconductor device such as MOS/SOS wherein yttrium or a lanthanide element is ion implanted into an interface between the substrate and the semiconductor film formed on the substrate to form an insulating layer containing yttrium or a lanthanide element at the interface.
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