Capacitive pressure sensor
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United States of America Patent
Stats
-
Jan 29, 1985
Grant Date -
N/A
app pub date -
Sep 28, 1982
filing date -
Sep 30, 1981
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A capacitive pressure sensor and its manufacturing method are disclosed. An amplifier is formed on the main surface of a first semiconductor substrate by a diffusion process, and its surface is covered with an insulating film. An electrode is vapor-deposited on the surface of the amplifier and electrically connected to the amplifier through a through hole formed in the insulating film. For forming a diaphragm, the surface of a second semiconductor substrate disposed facing the electrode to form a capacitor, which is opposite to the surface of the second semiconductor substrate facing the electrode, is partially etched away to form a depression. The first and second semiconductor substrates are anodically bonded to each other using a glass layer.
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