Gas feed for reactive ion etch system
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United States of America Patent
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Jan 29, 1985
Grant Date -
N/A
app pub date -
Nov 14, 1983
filing date -
Nov 14, 1983
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The gas feed system disclosed herein is useful in a reactive ion etching system in which a gas plasma is energized by an electrode plate through which the gas is introduced. Propagation of the plasma discharge down the gas feed path is blocked by a feed system in which the space between a pair of porous metal plugs is filled with a porous insulating material having a pore size too small to support discharge, i.e. corresponding to the mean free electron path in the gas.
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