Field effect transistor microwave amplifier
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United States of America Patent
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Feb 19, 1985
Grant Date -
N/A
app pub date -
Aug 20, 1982
filing date -
Aug 25, 1981
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a microwave preamplifier of a Doppler radar system used for Earth observation, three pre-matched and self-biassed field effect microwave transistors are provided. By supplying these transistors by means of a voltage regulator, whose output voltage varies under the action of a control circuit, the gain of this pre-amplifier may be varied without modifying the standing wave ratio, thereby obtaining modulation of the microwave signal amplified by the amplifier. Thus, additional modulation may be obtained, speech modulation for example, on the transmission signal of an Earth observation Doppler radar system.
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