Stacked semiconductor device with sloping sides
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United States of America Patent
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-
Feb 19, 1985
Grant Date -
N/A
app pub date -
Sep 28, 1982
filing date -
Sep 30, 1981
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Provided is a stacked semiconductor device wherein a plurality of semiconductor layers integrated with semiconductor elements are stacked with an insulating layer interposed between two adjacent of said semiconductor layers. This semiconductor device has one or more inclined faces extending over two or more of said semiconductor layers. These inclined faces are formed thereon with an interconnection layer or semiconductor element for effecting the transmission and reception of signals between circuits, having said semiconductor elements, formed in the different semiconductor layers, through another insulating layer.
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