Forming low-resistance contact to silicon
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United States of America Patent
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-
Mar 5, 1985
Grant Date -
N/A
app pub date -
Aug 31, 1983
filing date -
Aug 31, 1983
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Annealing a titanium-rich carbide film deposited on silicon produces, in a single processing step, both a stable titanium silicide contact and a titanium carbide diffusion barrier between the silicide and a subsequently formed overlying layer of aluminum. Reliable low-resistance contacts to VLSI devices are thereby provided in a cost-effective fabrication sequence. Other metallization systems, comprising a silicide and a diffusion barrier to aluminum formed in a single processing step, are also described.
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