Avalanche fuse element in programmable memory
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United States of America Patent
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-
Mar 26, 1985
Grant Date -
N/A
app pub date -
Mar 23, 1982
filing date -
Mar 23, 1982
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A programmable device is provided by a thin-oxide avalanche fuse element which is programmed at a voltage below the oxide breakdown level. This device may be used in a memory array of the PROM type. Upon breakdown, the thin oxide is perforated by small holes which fill with silicon to create short circuit.
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