Method of forming self-aligned contact openings
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United States of America Patent
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Apr 23, 1985
Grant Date -
N/A
app pub date -
Feb 23, 1984
filing date -
Feb 23, 1984
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A process for forming reliable contacts in a VLSI device wherein, after the source and drain regions have been formed, the contact openings are formed and the source and drain regions redoped. A heat treatment step anneals surface damage and causes lateral migration of the implanted ions to preclude the contact from forming a short circuit between the doped region and the substrate exposed as a result of any misalignment of the contact openings. As an added benefit, the process also prevents the contact from 'spiking' through the doped region to the underlying substrate.
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