Method for forming metallization structure having flat surface on semiconductor substrate
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United States of America Patent
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-
May 28, 1985
Grant Date -
N/A
app pub date -
Nov 3, 1983
filing date -
Nov 4, 1982
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A metallization structure having a substantially flat surface can be formed on a semiconductor substrate by forming first and second insulating layers on the substrate. The second insulating layer is selectively removed to form grooves therein. Then, a metallic material layer is conformably formed. The metallic layer has grooves corresponding to the grooves of the second insulating layer. A flowable polymer is applied to the surface of the resultant structure to form a layer having a flat surface. The polymer layer and the metallic layer are sequentially ion-etched to expose the second insulating layer. Thus, the metallization structure constituted by the remaining metallic layer and the second insulating layer is formed to have a flat surface.
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