MOS Voltage divider structure suitable for higher potential feedback regulation
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United States of America Patent
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-
Jul 2, 1985
Grant Date -
N/A
app pub date -
Jan 31, 1983
filing date -
Jan 31, 1983
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An MOS voltage divider is described which is particularly useful for dividing a relatively high voltage (e.g., 21 volts). Capacitance division is employed, thus, the divider consumes substantially no current. Capacitors are fabricated from first and second layers of polysilicon and an intermediate layer of silicon dioxide. Common centroid geometry is used to compensate for process variations.
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