Importance

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Abstract

A non-volatile memory cell (20) contains a pair of cross-coupled like-polarity FET's (Q1 and Q2) that serve as a volatile location (21) for storing a data bit and a like-polarity variable-threshold insulated-gate FET (Q3) that serves as a non-volatile storage location (22). The variable-threshold FET has its source coupled to the drain of one of the cross-coupled FET's, its insulated-gate electrode coupled to the drain of the other of the cross-coupled FET's, and its drain coupled to a power supply. A pair of impedance elements (R1 and R2) are coupled between the drains of the cross-coupled FET's, respectively, on one hand and the power supply on the other hand. Just before a power shutdown which causes the data bit to evaporate, the power supply is pulsed to a suitable level to cause the bit to be transferred to the non-volatile location. When power is restored to the normal level, the original data bit automatically returns to the volatile location.

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First Claim