Method for the formation of buried gates of a semiconductor device utilizing etch and refill techniques
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 16, 1985
Grant Date -
N/A
app pub date -
Jul 6, 1983
filing date -
Jul 13, 1982
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for the formation of buried gates in a semiconductor device using epitaxial growing method combined with diffusion method or diffusion by an additional heat treatment. The buried gate has smaller gate resistance by providing relatively high impurity concentration and also having good reverse characteristic by providing relatively low impurity concentration at the top of the buried gates.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully