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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
WESTERN ELECTRIC COMPANY INCORPORATED	222 BROADWAY A CORP OF NY NEW YORK NY 10038

International Classification(s)

• H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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• [Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Bean, John C	New Providence, NJ	16	410
Feldman, Leonard C	Berkeley Heights, NJ	18	420
Fiory, Anthony T	Summit, NJ	8	183

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

Full Text

US Patent No: 4529455

Method for epitaxially growing Ge.sub.x Si.sub.1-x layers on Si utilizing molecular beam epitaxy

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