Method of cleaning apparatus for forming deposited film
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United States of America Patent
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Jul 16, 1985
Grant Date -
N/A
app pub date -
Jan 30, 1984
filing date -
Feb 1, 1983
priority date (Note) -
Expired
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Abstract
A method of cleaning an apparatus for forming deposited film on a substrate to remove the substances attached to the inside walls of a reaction chamber in the course of the formation of deposited film on the substrate by etching with plasma reaction comprises using a gas mixture of carbon tetrafluoride and oxygen as etchant.
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