Method for providing a coating layer of silicon carbide on the surface of a substrate

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United States of America Patent

PATENT NO 4532150
SERIAL NO

06564293

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Abstract

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The invention provides a novel method for providing the surface of various kinds of substrate articles, e.g. sapphire, quartz, alumina, metals, glass, plastics and the like with a coating layer of an amorphous silicon carbide of the formula Si.sub.x C.sub.1-x, in which x is a positive number of 0.2 to 0.9, by exposing the surface of the substrate article to an atmosphere of plasma generated in a gaseous atmosphere of an organosilicon compound having no halogen or oxygen atom directly bonded to the silicon atom, such as hexamethyl disilane, optionally admixed with a vapor or gas of a hydrocarbon compound, e.g. methane, benzene and the like.

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Patent Owner(s)

Patent OwnerAddress
SHIN-ETSU CHEMICAL CO LTDTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Endo, Morinobu Nagano, JP 59 736
Hongu, Tatsuhiko Kanagawa, JP 14 272
Takamizawa, Minoru Tokyo, JP 67 775
Ueno, Susumu Ibaraki, JP 110 1330

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