Amorphous silicon photoreceptor with nitrogen and boron
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United States of America Patent
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-
Jul 30, 1985
Issued Date -
N/A
app pub date -
Feb 14, 1984
filing date -
Jan 25, 1982
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A photoreceptor of electrophotography having, on a substrate, an amorphous silicon (a-Si) layer formed by relying on plasma CVD technique, wherein the a-Si layer is formed in the presence of silane, diborane and nitrogen, and possibly phosphine as required. This a-Si layer may have a multiple layer structure comprising a thin a-Si layer formed in the presence of silane and diborane or nitrogen, and a principal a-Si layer formed in the presence of silane, diborane and nitrogen, and possibly phosphine as required, but in such instance the amount of phosphine which is added is less than three times that of diborane. Such photoreceptor has a good sensitivity to light rays, has long service life, and is not harmful to human body.
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