MOSFET with perimeter channel
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United States of America Patent
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-
Jul 30, 1985
Grant Date -
N/A
app pub date -
Sep 7, 1982
filing date -
Sep 7, 1982
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A vertical MOSFET device includes a major surface having an active, gate-controlled portion adjacent to an inactive portion. A gate-controlled perimeter channel is disposed at the boundary between the active and inactive portions.
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