Photodetector with enhanced light absorption
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United States of America Patent
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Jul 30, 1985
Grant Date -
N/A
app pub date -
Sep 27, 1982
filing date -
Sep 27, 1982
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A photodetector including a light transmissive electrically conducting layer having a textured surface with a semiconductor body thereon. This layer traps incident light thereby enhancing the absorption of light by the semiconductor body. A photodetector comprising a textured light transmissive electrically conducting layer of SnO.sub.2 and a body of hydrogenated amorphous silicon has a conversion efficiency about fifty percent greater than that of comparative cells. The invention also includes a method of fabricating the photodetector of the invention.
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