Reduction reoxidation type semiconductor ceramic condenser
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United States of America Patent
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Aug 6, 1985
Grant Date -
N/A
app pub date -
Feb 6, 1984
filing date -
Feb 7, 1983
priority date (Note) -
Expired
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Abstract
A reduction reoxidation ceramic semiconductor having a central ceramic portion with a dielectric layer formed thereon by oxidation. The ohmic electrode is formed from a material (e.g. an aluminum-glass frit) that prevents formation of the dielectric layer under the ohmic electrode during reoxidation. The non-ohmic electrode is formed on the dielectric layer.
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