Chemical vapor deposition of titanium nitride and like films
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United States of America Patent
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Aug 13, 1985
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app pub date -
Oct 28, 1983
filing date -
Nov 22, 1982
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Abstract
A novel process for placing a thin film of a metal nitride, e.g. titanium nitride, on a glass substrate by mixing a metal halide with a reducing gas like ammonia, preferably within a range of from about 250.degree. C. to 320.degree. C., and then reacting the gases at the surface of a glass substrate heated to, e.g., about 400.degree. C. to about 700.degree. C. to form the film on the glass.
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