Semiconductor structures and manufacturing methods
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United States of America Patent
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Aug 20, 1985
Grant Date -
N/A
app pub date -
Nov 23, 1981
filing date -
Nov 23, 1981
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A plurality of microwave semiconductor devices is provided by plating a thin heat sink layer on a surface of a wafer of semiconductor material, masking selected portions of the heat sink layer, and plating unmasked portions of the heat sink layer to form a support layer. Substantial portions of the semiconductor material are removed to form a plurality of mesa shaped diodes, at least one semiconductor mesa shaped diode being formed in each region of the semiconductor material disposed on the masked portions of the heat sink layer. Thus each mesa shaped diode, or sets of mesa shaped diodes, has formed on one surface thereof a thin heat sink layer while the mesa shaped diodes are supported by the support layer for subsequent processing. Upper electrodes for the diodes are formed interconnecting the mesa shaped diodes. The individual diodes, or sets thereof, are then separated from the support structure to provide individual single diode, or multiple diode devices.
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