Nonvolatile memory cell

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United States of America Patent

PATENT NO 4538246
SERIAL NO

06437608

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Abstract

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A static random access memory array cell that is non-volatile because when power fails a floating gate is charged or not charged depending on the information content of the cell. When power is restored, all cells are written to a positive state except those with charged floating gates so that the information content of the array is recreated.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL SEMICONDUCTOR CORPORATION A CORP OF DE2900 SEMICONDUCTOR DR SANTA CLARA CA 95052

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hu, Chenming Hercules, CA 194 10122
Shum, Ying Cupertino, CA 1 18
Wang, Samuel T San Jose, CA 4 77

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