Pulse anneal method for solar cell
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United States of America Patent
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Sep 3, 1985
Grant Date -
N/A
app pub date -
Jun 6, 1983
filing date -
Jun 6, 1983
priority date (Note) -
Expired
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Abstract
A solar cell including a pulse annealed layer of crystalline, amorphous or polycrystalline semiconductor material of one conductivity type and either a layer of opposite conductivity type or a liquid electrolyte forming a collector junction therewith. A method of improving the characteristics of a solar cell including at least one layer of crystalline, amorphous or polycrystalline semiconductor material which includes the step of pulse annealing said semiconductor material.
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