Fusible link employing capacitor structure
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United States of America Patent
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-
Sep 24, 1985
Issued Date -
N/A
app pub date -
Mar 27, 1985
filing date -
Sep 7, 1982
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A capacitor-like MOS structure which provides a fusible link useful in a ROM, redundancy circuit, or the like is disclosed. An oxide layer insulates a polysilicon electrode from a doped substrate region. A potential is applied between the electrode and the doped region of sufficient magnitude to cause the oxide to rupture and to cause permanent filaments to be formed within the oxide. The filaments provide permanent conductive links between the polysilicon electrode and the doped substrate region.
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