Fabrication of small dense silicon carbide spheres
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United States of America Patent
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-
Nov 5, 1985
Grant Date -
N/A
app pub date -
Apr 11, 1984
filing date -
Apr 11, 1984
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Spherical particles of polycrystalline silicon carbide having a density greater than 80% of the theoretical density for silicon carbide and having an average diameter ranging from about 10 microns to about 5000 microns are produced by forming spherical agglomerates of a sinterable silicon carbide powder and sintering the agglomerates at a temperature ranging from about 1900.degree. C. to about 2300.degree. C.
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