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Abstract

A method of diffusing dopant material into the crystal surfaces of silicon crystal slices which comprises placing the dopant material in the form of wafers between the adjacent major faces of each of a stack of silicon crystal slices, clamping said slices and wafers together as an assembly within a refractory boat so that the crystal slices are in substantially parallel vertical disposition with their entire facing surfaces covered by dopant material and thereafter introducing the boat and the assembly into a zone of high temperature wherein the dopant material is simultaneously diffused into the major faces of the silicon crystal slices. Other arrangements of silicon crystal slices and dopant wafers of the same or different materials can produce slices diffused on both sides with the same dopant or with a different dopant material on each side.

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First Claim