Insulated type semiconductor devices
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United States of America Patent
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-
Dec 3, 1985
Grant Date -
N/A
app pub date -
Jun 7, 1982
filing date -
Jun 5, 1981
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In an insulated type semiconductor device, a metal member is disposed between an insulating member and a circuit element which includes a semiconductor substrate. The metal member is a composite metal member having at least two different kinds of metal layers bonded to each other. In a preferred embodiment, in order to reduce undesirable effects caused by differences in the thermal coefficients .alpha..sub.I and .alpha..sub.S of the insulating member and the semiconductor substrate, respectively, the thermal expansion coefficient of said composite metal member as a whole .alpha..sub.M is adjusted in a range between .alpha..sub.I and .alpha..sub.S.
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