Composite back-etch/lift-off stencil for proximity effect minimization
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United States of America Patent
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Dec 24, 1985
Grant Date -
N/A
app pub date -
Oct 1, 1984
filing date -
Oct 1, 1984
priority date (Note) -
Expired
status (Latency Note)
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Abstract
This composite back-etch/lift-off stencil method avoids the uncontrolled changes in the properties of contacts in small devices caused by the close proximity of the lift-off resist stencil to the contact area during the precleaning, surface preparation and metal deposition processes. This method limits the area of the wafer exposed to back-etching and thus restores the freedom of choice of contact metallurgy. Back-etching is only applied in the areas of the wafer near to the contact holes; lift-off techniques are used for the rest of the integrated circuit.
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